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| Data Sheet, Rev. 2.0, June 2006 BTS 7930B H ig h C u r r e n t P N H a lf B r i d g e N o v a l it h I C TM 30 A, 10 m + 18 m typ. Automotive Power Never stop thinking. High Current PN Half Bridge BTS 7930B Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16 4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17 4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20 5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 7 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Data Sheet 1 Rev. 2.0, 2006-06-01 High Current PN Half Bridge NovalithICTM BTS 7930B Product Summary BTS 7930B The BTS 7930B is a fully integrated high current half P-TO-263-7 bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7930B provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. Basic Features * * * * * * * * * * * Path resistance of typ. 28 m @ 25 C Low quiescent current of typ. 7 A @ 25 C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 30 A typ. Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Type BTS 7930B Data Sheet Package P-TO-263-7 2 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Overview 1 Overview The BTS 7930B is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7930B can be combined with other BTS 7930B to form H-bridge and 3-phase drive configurations. 1.1 Block Diagram BTS 7930B HS base-chip VS Top-chip IN INH SR IS Gate Driver Dead Time Gen. Slew Rate Adj. UV Shut Down OV Lock Out Current Lim. Diagnosis Current Sense OUT LS base-chip GND Figure 1 Block Diagram Data Sheet 3 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Overview 1.2 Terms Following figure shows the terms used in this data sheet. VVS ,VS IIN V IN VIN H V SR VIS I IN H ISR I IS IN VS I VS , -I D (H S) V D S(H S) INH BTS 7930B OUT I OU T , I L VSD (L S) V OU T SR IS GND I GN D , I D (L S) Figure 2 Terms Data Sheet 4 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Pin Configuration 2 2.1 Pin Configuration Pin Assignment BTS 7930B P-TO-263-7 8 12 3 4 56 7 Figure 3 Pin Assignment BTS 7930B (top view) 2.2 Pin 1 2 3 4,8 5 Pin Definitions and Functions Symbol GND IN INH OUT SR I/O I I O I Function Ground Input Defines whether high- or lowside switch is activated Inhibit When set to low device goes in sleep mode Power output of the bridge Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND Current Sense and Diagnosis Supply 6 7 IS VS O - Bold type: pin needs power wiring Data Sheet 5 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Maximum Ratings 3 Pos Maximum Ratings Parameter Symbol Limits min max 45 5.3 201) 501) V V A A Unit Test Condition -40 C < Tj < 150 C (unless otherwise specified) Electrical Maximum Ratings 3.0.1 3.0.2 3.0.3 3.0.4 Supply voltage Logic Input Voltage HS/LS continuous drain current HS/LS pulsed drain current HS/LS PWM current VVS VIN VINH ID(HS) ID(LS) ID(HS) ID(LS) ID(HS) ID(LS) -0.3 -0.3 -20 -50 TC < 85C switch active TC < 85C tpulse = 10ms single pulse 3.0.5 -26 -28 261) 281) 1.0 45 45 150 150 A A V V V C C kV TC < 85C TC < 85C f = 1kHz, DC = 50% f = 20kHz, DC = 50% 3.0.6 3.0.7 3.0.8 3.0.9 VSR -0.3 Voltage between VS and VVS -VIS -0.3 Voltage at SR pin IS pin Voltage at IS pin Junction temperature VIS Tj Tstg VESD -20 -40 -55 Thermal Maximum Ratings 3.0.10 Storage temperature ESD Susceptibility 3.0.11 ESD susceptibility HBM IN, INH, SR, IS OUT, GND, VS 1) according to EIA/ JESD 22-A 114B -2 -4 2 4 Maximum reachable current may be smaller depending on current limitation level Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet 6 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4 4.1 Block Description and Characteristics Supply Characteristics - 40 C < Tj < 150 C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. General 4.1.1 4.1.2 Operating Voltage Supply Current max. 28.0 V 3 mA VS IVS(on) 5.5 - - 2 VINH = 5 V VIN = 0 V or 5 V RSR=0 DC-mode normal operation (no fault condition) 4.1.3 Quiescent Current IVS(off) - 7 15 A - - 65 A VINH = 0 V VIN = 0 V or 5 V Tj <85 C VINH = 0 V VIN = 0 V or 5 V Data Sheet 7 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.2 Power Stages The power stages of the BTS 7930B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj . The typical on state resistance characteristics are shown in Figure 4. High Side Switch 40 Low Side Switch 70 m 35 30 m 60 RON(HS) 25 20 15 10 5 4 8 12 16 20 24 V 28 50 RON(LS) 40 T j = 150C Tj = 25C T j = -40C 30 Tj = 150C 20 Tj = 25C T j = -40C 10 4 8 12 16 20 24 V 28 VS VS Figure 4 Typical On State Resistance vs. Supply Voltage Data Sheet 8 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.2.1 Power Stages - Static Characteristics - 40 C < Tj < 150 C, 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. High Side Switch - Static Characteristics 4.2.1 On state high side resistance max. m - - 4.2.2 Leakage current high side 10 15 - 13 19 1 A RON(HS) IL(LKHS) - - - 50 A 4.2.3 Reverse diode forward-voltage high side 1) VDS(HS) - - - 0.9 0.8 0.6 1.5 1.1 0.8 V IOUT = 8 A VS= 13.5 V Tj = 25 C Tj = 150 C VINH = 0 V VOUT = 0 V Tj < 85 C VINH = 0 V VOUT = 0 V Tj = 150 C IOUT = -8 A Tj = -40 C Tj = 25 C Tj = 150 C IOUT = -8 A VS= 13.5V Tj = 25 C Tj = 150 C VINH = 0 V VOUT = VS Tj < 85 C VINH = 0 V VOUT = VS Tj = 150 C IOUT = 8 A Tj = -40 C Tj = 25 C Tj = 150 C Low Side Switch - Static Characteristics 4.2.4 On state low side resistance RON(LS) - - 18 30 - 24 40 1 m 4.2.5 Leakage current low side IL(LKLS) - A - - 15 A 4.2.6 Reverse diode forward-voltage low side 1) VSD(LS) - - - 0.9 0.8 0.7 1.5 1.1 0.9 V 1) Due to active freewheeling, diode is conducting only for a few s, depending on RSR Data Sheet 9 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.2.2 Switching Times IN tdr(HS) tr(HS) VOUT 90% 90% t tdf (HS) tf (HS) V OUT VOUT 10% 10% t Figure 5 Definition of switching times high side (Rload to GND) IN t df (LS) tf (LS) VOUT 90% 90% t t dr(LS) tr(LS) VOUT V OUT 10% 10% t Figure 6 Definition of switching times low side (Rload to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas: * tHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS)) * tLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). Data Sheet 10 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.2.3 Power Stages - Dynamic Characteristics -40 C < Tj < 150 C, VS = 13.5 V, Rload = 4 (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. HIgh Side Switch Dynamic Characteristics 4.2.7 Rise-time of HS typ. max. s 0.5 - 2 4.2.8 Slew rate HS on 1 2 5 11 6 2 3.1 4.4 14 1 2 5 11 6 2 2.4 3.4 10 1.5 - 11 V/s - - - 1.7 - 5.6 - - - s 4.5 - 22.4 s 0.5 - 2 4.2.11 Slew rate HS off 1.5 - 11 V/s - - - 1.2 - 4 - - - s 3.6 - 16 tr(HS) RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k VOUT/ tr( HS) 4.2.9 Switch on delay time HS tdr(HS) 4.2.10 Fall-time of HS tf(HS) -VOUT/ tf(HS) 4.2.12 Switch off delay time HS tdf(HS) Data Sheet 11 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics -40 C < Tj < 150 C, VS = 13.5 V, Rload = 4 (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. Low Side Switch Dynamic Characteristics 4.2.13 Rise-time of LS typ. max. tr(LS) 0.5 - 2 1 2 5 11 6 2 1.3 2.2 5 1 2 5 11 6 2 4 5.6 16 1.5 - 11 s RSR = 0 RSR = 5.1 k RSR = 51 k V/s 4.2.14 Slew rate LS switch off VOUT/ tr(LS) - - - 0.7 - 2 - - - s 1.9 - 11 s 1.5 - 11 V/s - - - s 5.8 - 25.4 RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k RSR = 0 RSR = 5.1 k RSR = 51 k 4.2.15 Switch off delay time LS tdr(LS) 4.2.16 Fall-time of LS tf(LS) 0.5 - 2 4.2.17 Slew rate LS switch on -VOUT/ tf(LS) - - - 2.2 - 6.4 4.2.18 Switch on delay time LS tdf(LS) Data Sheet 12 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.3 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 4.3.4). In a fault condition the BTS 7930B will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the IS pin as described in the paragraph "Status Flag Diagnosis With Current Sense Capability" on Page 17 and Figure 10. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes. 4.3.1 Overvoltage Lock Out To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch-on voltage VOV(ON). In H-bridge configuration, this behavior of the BTS 7930B will lead to freewheeling in highside during over voltage. 4.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). 4.3.3 Overtemperature Protection The BTS 7930B is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis T in the meantime. Repetitive use of the overtemperature protection might reduce lifetime. 4.3.4 Current Limitation The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS . During that time all changes at the Data Sheet 13 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 8 IL ICLx ICLx 0 tCLS t Figure 7 Timing Diagram Current Limitation (Inductive Load) Low SideSwitch 55 50 High Side Switch 55 50 I C L H [A] Tj = 25C 45 40 35 30 25 20 0 500 1000 I C L L [A] Tj = -40C 45 40 35 30 25 20 Tj = 150C ICLH0 I CLL0 Tj = 25C Tj = -40C Tj = 150C 1500 2000 0 500 1000 1500 2000 dI L/dt [A/ms] dI L/dt [A/ms] Figure 8 Data Sheet Current Limitation Level vs. Current Slew Rate dI/dt 14 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics High Side Switch 50 Low Side Switch 50 A 45 A Tj = -40C Tj = 25C T j = 150C 45 40 40 I CLH 35 I CLL 35 Tj = 25C 30 Tj = -40C 30 Tj = 150C 25 25 20 4 6 8 10 12 14 16 18 V 20 20 4 6 8 10 12 14 16 18 V 20 VS VS Figure 9 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. That way of limiting the current has the advantage that the power dissipation in the BTS 7930B is much smaller than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device. 4.3.5 Short Circuit Protection The device is short circuit protected against * output short circuit to ground * output short circuit to supply voltage * short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the over-temperature shut down of the device Data Sheet 15 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.3.6 Electrical Characteristics - Protection Functions - 40 C < Tj < 150 C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. Under Voltage Shut Down 4.3.1 4.3.2 4.3.3 4.3.4 4.3.5 4.3.6 4.3.7 Switch-ON voltage Switch-OFF voltage ON/OFF hysteresis Switch-ON voltage Switch-OFF voltage ON/OFF hysteresis Current limitation detection level high side Current limitation detection level low side max. 5.5 V 5.4 V - - 30 - V V V V A 30 28 26 42 40 38 32 31 30 115 54 52 50 A 20 19 18 43 42 41 210 s VUV(ON) VUV(OFF) VUV(HY) - 4.0 - - - 0.2 - - 0.2 VS increasing VS decreasing - Over Voltage Lock Out VOV(ON) 27.8 VOV(OFF) 28.0 VOV(HY) - ICLH0 VS decreasing VS increasing - Current Limitation 4.3.8 ICLL0 VS=13.5 V Tj = -40 C Tj = 25 C Tj = 150 C VS=13.5V Tj = -40 C Tj = 25 C Tj = 150 C VS=13.5V Current Limitation Timing 4.3.9 Shut off time for HS and LS tCLS 70 Thermal Shut Down 4.3.10 Thermal shut down junction temperature 4.3.11 Thermal switch on junction temperature 4.3.12 Thermal hysteresis TjSD TjSO T 155 150 - 4 175 - 7 - 200 C 190 C - - K s - - - - 4.3.13 Reset pulse at INH pin treset (INH low) Data Sheet 16 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.4 4.4.1 Control and Diagnostics Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTS 7930B can be interfaced directly to a microcontroller. 4.4.2 Dead Time Generation In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate. 4.4.3 Adjustable Slew Rate In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND. 4.4.4 Status Flag Diagnosis With Current Sense Capability The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS determines the voltage per output current. E.g. with the nominal value of 6000 for the current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1k leads to VIS = (IL / 6 A)V. In case of a fault condition the status output is connected to a current source which is independent of the load current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. Data Sheet 17 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics Normal operation: current sense mode VS ESD-ZD Fault condition: error flag mode VS ESD-ZD IIS~ ILoad IIS(lim) Sense output logic IS Sense output logic IS R IS VIS IIS(lim) RIS VIS Figure 10 Sense current and fault current Data Sheet 18 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.4.5 Truth Table Inputs INH IN X 0 1 X 0 1 1 Outputs HSS LSS OFF OFF ON ON OFF ON OFF OFF IS 0 0 CS 1 Stand-by mode LSS active HSS active Shut-down of LSS, HSS activated, error detected UV lockout Stand-by mode, reset of latch Shut-down with latch, error detected Switched mode, error detected Switched mode, error detected Mode Device State Normal operation Over-voltage (OV) X Under-voltage (UV) Overtemperature or short circuit of HSS or LSS X 0 1 X X X 1 0 OFF OFF OFF OFF ON OFF OFF OFF ON OFF 0 0 1 1 1 Current limitation mode 1 1 Inputs: Switches Status Flag IS: 0 = Logic LOW 1 = Logic HIGH X = 0 or 1 OFF = switched off ON = switched on CS = Current sense mode 1 = Logic HIGH (error) Data Sheet 19 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Block Description and Characteristics 4.4.6 Electrical Characteristics - Control and Diagnostics - 40 C < Tj < 150 C, 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. Control Inputs (IN and INH) 4.4.1 4.4.2 4.4.3 4.4.4 4.4.5 High level voltage INH, IN Low level voltage INH, IN Input voltage hysteresis Input current Input current typ. 1.75 1.6 1.4 350 200 30 25 max. 2.15 V 2 - - - V mV - - - VINH(H) VIN(H) VINH(L) VIN(L) VINHHY VINHY IINH(H) IIN(H) IINH(L) IIN(L) - 1.1 - - - - 150 A 125 A VIN = VINH= 5.3 V VIN = VINH=0.4 V Current Sense 4.4.6 Current sense ratio kILIS in static on-condition kILIS = IL / IIS Maximum analog sense current, sense current in fault condition 103 4.2 3.6 2.4 4 6 6 6 5 7.8 8.4 9.6 7 mA RIS = 1 k IL = 15 A IL = 8 A IL = 3 A VS = 13.5 V RIS = 1k 4.4.7 IIS(lim) 4.4.8 4.4.9 Isense leakage current IISL Isense leakage current, IISH active high side switch - - - 1 1 200 A A VIN= 0 V or VINH= 0 V VIN = VINH= 5 V IL= 0 A Data Sheet 20 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Thermal Characteristics 5 Pos Thermal Characteristics Parameter Symbol Limits min max - 4.8 Unit Test Condition K/W 5.0.1 Thermal Resistance Rthjc(LS) Junction-Case, Low Side Switch Rthjc(LS) = Tj(LS)/ Pv(LS) 5.0.2 Thermal Resistance Rthjc(HS) Junction-Case, High Side Switch Rthjc(HS) = Tj(HS)/ Pv(HS) 5.0.3 Thermal Resistance Junction-Case, both Switches Rthjc= max[Tj(HS), Tj(LS)] / (Pv(HS) + Pv(LS)) 5.0.4 Thermal Resistance Junction-Ambient - 1.6 K/W Rthjc - 2.4 K/W Rthja - 50 K/W 6cm2 cooling area Note: Thermal characteristics are not subject to production test - specified by design. Data Sheet 21 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Application 6 6.1 Application Application Example Microcontroller C I/O Reset Vdd Voltage Regulator WO RO Q D Reverse Polarity Protection VS TLE 4278G GND I I/O I/O I/O I/O I/O Vss SPD 50P03L BTS 7930B INH IN IS SR GND GND OUT VS VS BTS 7930B INH IN OUT IS SR M High Current H-Bridge Figure 11 Application Example: H-Bridge with two BTS 7930B 6.2 Layout Considerations Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTS 7930B has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the BTS 7930B is used in a Hbridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF. The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 k. Data Sheet 22 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Package Outlines P-TO-263-7 7 Package Outlines P-TO-263-7 P-TO-263-7 (Plastic Transistor Single Outline Package) 4.4 9.9 7.5 10.3 A 1.3 +0.1 -0.02 B 0.05 4.7 0.5 2.7 0.5 6.6 (14.9) 10.2 0.15 9.2 0.2 6.5 1) 0.1 17 0...0.1 5 7x 0.6 +0.1 -0.03 6 x 1.27 0.25 M 2.4 0.5 0.15 8 M AX. AB 0.1 B 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut . Footprint 9.4 4.6 10.8 16.15 0.47 0.8 8.42 HLGF1019 You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 23 Dimensions in mm Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Revision History 8 Revision History Changes / Comments Version Date Rev. 1.0 2005-08-03 Preliminary Data Sheet Rev. 1.1 2006-04-26 Preliminary Data Sheet * Layout changes (new Infineon logo, ordering code removed) * Operating range extended (page 7) * Switching times adjusted (page 11/12) * Rth values corrected (page 21) * Application drawing updated Rev. 2.0 2006-06-01 Data Sheet * Figure 7 (page 14) updated Data Sheet 24 2006-06-01 High Current PN Half Bridge BTS 7930B Revision History Data Sheet 25 Rev. 2.0, 2006-06-01 High Current PN Half Bridge BTS 7930B Edition 2006-06-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 6/21/06. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 26 2006-06-01 http://www.infineon.com Published by Infineon Technologies AG |
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